Schematic diagram of electric circuit of DC chopper speed control system composed of IGBT

Probe current voltage pin 420*4450 head diameter 5.0 over current current and voltage pin

Industrial Router Crystal 3.2*2.5mm 3225 26M (26.000MHZ) 12PF 10PPM 20PPM 30PPM

Adjustable capacitor Murata genuine original

IGBT (Insulated Gate Bipolar Transistor), insulated gate bipolar transistor, is a composite fully controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor), which has both MOSFETs. The advantages of both the high input impedance and the low turn-on voltage drop of the GTR. The GTR saturation voltage is reduced, the current carrying density is large, but the driving current is large; the MOSFET driving power is small, the switching speed is fast, but the conduction voltage drop is large, and the current carrying density is small. The IGBT combines the advantages of the above two devices, with low driving power and reduced saturation voltage. It is very suitable for converter systems with DC voltages of 600V and above, such as AC motors, inverters, switching power supplies, lighting circuits, traction drives, etc.