The reporter learned from the Provincial Information Industry Department that the silicon carbide single crystal growth furnace was successfully developed at the State Key Laboratory of Crystal Materials of Shandong University, and the main bottleneck restricting the development of high-performance and high-power optoelectronics industry in Shandong Province has been broken.
In recent years, the photovoltaic industry in Shandong Province, which is dominated by semiconductor lighting, has achieved rapid development. However, large-diameter silicon carbide single crystal growth furnaces capable of manufacturing semiconductor lighting raw materials have always relied on imports, resulting in high production costs for semiconductor lighting. The State Key Laboratory of Crystal Materials of Shandong University has many years of experience in the development of single crystal growth and semiconductor materials. At the end of 2007, they began the development of silicon carbide single crystal furnaces. Under the guidance of Academician Jiang Minhua, Dr. Xu Xiangang, a special professor of Changjiang Scholars, led the team members to complete the parts processing and procurement, control circuit, software development and installation and debugging of the single crystal furnace through more than half a year of hard work. Crystal growth test. An innovative scheme for single crystal rotation and lifting was proposed. Vacuum design, high purity gas transport, cooling water support and power control scheme were completed. The shortcomings of imported single crystal furnace were improved, and a 2 inch silicon carbide single crystal furnace was successfully developed. And a 2-inch silicon carbide single crystal was grown.
It is understood that the maximum temperature of the silicon carbide single crystal growth furnace independently developed by the laboratory can reach 2500 ° C, the vacuum leakage rate is small, the working pressure can be controlled widely, the growth parameters are automatically controlled, the growth furnace is stable, and the growth results are reproducible and stable. High sex. The development cost is only one-third of the imported single crystal growth furnace, and the cost of large-scale equipment manufacturing can be further reduced, eliminating the key obstacles in the industrialization of silicon carbide single crystal.
According to relevant sources of the Provincial Information Industry Department, the third generation of wide-bandgap semiconductor silicon carbide can be widely used in microwave high-power devices and semiconductor lighting industries to grow large-diameter silicon carbide single crystals, and push silicon carbide substrates into practical use. It is of strategic importance to actively promote the localization of high-power microwave devices and the development of the semiconductor lighting industry. With the successful completion of the final difficulty in the industrialization of silicon carbide single crystals, China has realized all localization from single crystal growth furnace manufacturing, single crystal growth, substrate processing and application. The successful development of the single crystal furnace has filled the domestic gap, broke the foreign monopoly, and laid a solid foundation for us to take the semiconductor lighting with Shandong characteristics.
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