BluGlass reduces GaN film growth impurities by RPCVD

Electronic enthusiasts [translation/Joyce] Australia's BluGlass claims to use its low temperature remote plasma chemical vapor deposition (RPCVD) technology to produce gallium nitride (GaN) of the desired purity. The company says its RPCVD technology can produce gallium nitride with low levels of carbon, hydrogen and oxygen impurities, which is comparable in content to metal-organic vapor-deposited GaN layers.

The well-known and independent material properties company Evans AnalyTIcal Group has demonstrated secondary ion spectroscopy, which controls the levels of carbon, hydrogen and oxygen impurities to less than 1*1017 atoms per cubic centimeter.

BluGlass now plans to optimize the p-GaN layer and introduce the benefits of RPCVD to customers, including the increased efficiency of LED devices compared to traditional MOCVD.

Giles Bourne, CEO of BluGlass, said: "This achievement is a breakthrough for our company and a key step in demonstrating our technical strength to the industry and future customers. As we all know, carbon and oxygen inhibit the obstacles of RPCVD technology, so these two The reduction of impurities will be an important finding."


Usb Cable Type C

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